MOSFET – Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

文件：326.73 Kbytes 页数：6 Pages

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丝印：005N10MCL；Package：LFPAK4；MOSFET – Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

文件：326.73 Kbytes 页数：6 Pages

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安森美半导体

MOSFET – Power, Single N-Channel 100 V, 5.1 mΩ, 108 A

MOSFET – Power, SingleN-Channel100 V, 5.1 mΩ, 108 A • small foot print - 5mm x 6mm\n• Compact design\n• Low Rdson\n• Minimize conduction Losses\n• Low Qg\n• Minimize switching losses\n• AEC-Q101 Qualified\n• Qualified for automotive application;

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安森美半导体

MOSFET ??Power, Single N-Channel

文件：137.76 Kbytes 页数：6 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS005N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

文件：153.43 Kbytes 页数：8 Pages

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安森美半导体