MOSFET ??Power, Single N-Channel 60 V, 2.0 m, 185 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：346.02 Kbytes 页数：7 Pages

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安森美半导体

丝印：2D2N06CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 60 V, 2.0 m, 185 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：346.02 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

功率 MOSFET，60 V，2.0Ω，185 A，单 N 沟道

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

ONSEMI

安森美半导体

MOSFET – Power, Single, N-Channel

Features  Small Footprint (5x6 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  LFPAK4 Package, Industry Standard  These Devices are Pb−Free and are RoHS Compliant

文件：348.09 Kbytes 页数：7 Pages

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安森美半导体