MOSFET - Power, Single N-Channel 60 V, 4.7 m, 92 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：211.53 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：4D6N06C；Package：LFPAK4；MOSFET - Power, Single N-Channel 60 V, 4.7 m, 92 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：211.53 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 60 V, 4.7 mΩ, 92 A, Single N-Channel NVMYS4D6N06CTWG

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability. • Small Footprint (5x6mm)\n• Compact Design\n• Low RDS (ON)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• LFPAK8 Package\n• Industry Standard\n• AEC-Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free and are RoHS Compliant;

ONSEMI

安森美半导体

Power MOSFET 60 V, 4.7 mΩ, 92 A, Single N-Channel NVMYS4D6N06CTWG

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability. • Small Footprint (5x6mm)\n• Compact Design\n• Low RDS (ON)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• LFPAK8 Package\n• Industry Standard\n• AEC-Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free and are RoHS Compliant;

ONSEMI

安森美半导体