NVMYS7D3N04CLTWG规格书应用电路批发采购-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NVMYS7D3N04CLTWG	文件：340.7 Kbytes Page：7 Pages	丝印：7D3N04CL；Package：LFPAK4；MOSFET – Power, Single N-Channel 40 V, 7.3 m, 52 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant 文件：340.7 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTMYS7D3N04CL	文件：322.15 Kbytes Page：7 Pages	Power MOSFET 40 V, 7.3 m, 52 A, Single N?묬hannel 文件：322.15 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTMYS7D3N04CLTWG	文件：322.15 Kbytes Page：7 Pages	Power MOSFET 40 V, 7.3 m, 52 A, Single N?묬hannel 文件：322.15 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NVMYS7D3N04CL	文件：340.7 Kbytes Page：7 Pages	MOSFET – Power, Single N-Channel 40 V, 7.3 m, 52 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant 文件：340.7 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI

更多NVMYS7D3N04CLTWG供应商更新时间2026-9-24 9:24:00