Recording up to 10MP resolution

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LVL1

Silicon Photo Transistor

Structure 1.1 Chip Size : 1.2mm X 0.45mm 1.2 Chip thickness : 230±20um 1.3 Metallization : Top - Al(2um), Bottom - Au 1.4 Back Metal : Au(1,000Å ) 1.5 Passivation : Silicon Nitride 1.6 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um

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KODENSHI

可天士

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

NPN Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • High allowable power dissipation. • Halogen free compliance. Applications • DC / DC converters, relay d

文件：260.41 Kbytes 页数：4 Pages

SANYO

三洋

LMX1204 Low-Noise, High-Frequency JESD Buffer/Multiplier/Divider

文件：2.27321 Mbytes 页数：34 Pages

TI

德州仪器