Small Signal MOSFET 30 V, 0.56 A, Single N?묬hannel, SOT??3

Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Ratin

文件：105.87 Kbytes 页数：5 Pages

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安森美半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：484.86 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：485.92 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Small Signal MOSFET 30 V, 0.56 A, Single N?묬hannel, SOT??3

Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Ratin

文件：105.87 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Small Signal MOSFET

文件：90.54 Kbytes 页数：5 Pages

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单 N 沟道小信号 MOSFET，30V，560mA，1.5Ω

Automotive Power MOSFET ideal for low power applications. 30V, 560mA, 1.5 Ohm, Single N-Channel, SOT-23.AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • ESD Protected Gate\n• Minimum Breakdown Voltage Rating of 30 V\n• RoHS Compliant\n• AEC-Q101 Qualified and PPAP capable;

ONSEMI

安森美半导体