Silicon Photo Transistor

Structure 1.1 Chip Size : 1.2mm X 0.45mm 1.2 Chip thickness : 230±20um 1.3 Metallization : Top - Al(2um), Bottom - Au 1.4 Back Metal : Au(1,000Å ) 1.5 Passivation : Silicon Nitride 1.6 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um

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KODENSHI

可天士

Silicon Photo Transistor

Kodenshi-AUK

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

NPN Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • High allowable power dissipation. • Halogen free compliance. Applications • DC / DC converters, relay d

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SANYO

三洋

LMX1204 Low-Noise, High-Frequency JESD Buffer/Multiplier/Divider

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TI

德州仪器

AC Power Switch

Description The PM1204 is an AC Solid State Switch using optical coupling with dual power SCR outputs to produce an alternative to optocoupler and Triac circuits. The PM1204 switches are robust enough to provide a blocking voltage of up to 400VP. In addition, tightly controlled zero-cross circuit

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CLARE

Clare, Inc.