MOSFET ??Power, Single N-Channel 40 V, 3.3 m, 102 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：334.57 Kbytes 页数：7 Pages

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丝印：3D5N04C；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 3.3 m, 102 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：334.57 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET 40 V, 3.3Ω, 102 A, Single N-Channel

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

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安森美半导体

MOSFET ??Power, Single, N-Channel 40 V, 3.3 m, 102 A

文件：331.91 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel 40 V, 3.3 m, 102 A

文件：331.91 Kbytes 页数：7 Pages

ONSEMI

安森美半导体