MOSFET ??Power, Single N-Channel 40 V, 2.3 m, 138 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：279.76 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：2D4N04C；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 2.3 m, 138 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：279.76 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

功率 MOSFET，40 V，2.4Ω，130 A，单 N 沟道

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

ONSEMI

安森美半导体

Power MOSFET 40 V, 2.3 m, 138 A, Single N?묬hannel

文件：203.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 2.3 m, 138 A, Single N?묬hannel

文件：203.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体