丝印：1D24C；Package：TCPAK57；MOSFET – Power, Single N-Channel 40 V, 1.25 m, 451 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 5x7 Top Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：327.79 Kbytes 页数：7 Pages

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MOSFET ??Power, Single N-Channel 40 V, 1.1 m, 258 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：342.62 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 1.1 m, 258 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：342.62 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 1.2 m, 237 A, Single N?묬hannel

文件：356.69 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 1.2 m, 237 A, Single N?묬hannel

文件：356.69 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel 40 V, 1.1 m, 258 A

文件：343.77 Kbytes 页数：7 Pages

ONSEMI

安森美半导体