丝印：0D4N04CL；Package：POWER88；MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Powe

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MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Co

文件：386.41 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, SO8-FL 40 V, 0.42 m, 509 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：217.25 Kbytes 页数：8 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

文件：399.28 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

文件：400.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体