MOSFET - Power, Single N-Channel, SO8-FL 40 V, 0.42 m, 509 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：217.25 Kbytes 页数：8 Pages

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丝印：0D4N4；Package：DFN5；MOSFET - Power, Single N-Channel, SO8-FL 40 V, 0.42 m, 509 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：217.25 Kbytes 页数：8 Pages

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安森美半导体

Power MOSFET, Single, N-Channel, 40V, 0.42mΩ, 509A, SO8-FL 5x6

The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress withou • Low RDS(on) to Minimize Conduction Losses\n• Lower Gate Charge\n• Good Body Diode Softness;

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MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

文件：399.28 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

文件：400.4 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

文件：400.4 Kbytes 页数：7 Pages

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安森美半导体