MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

文件：399.28 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

文件：400.4 Kbytes 页数：7 Pages

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安森美半导体

丝印：0D4N04CL；Package：POWER88；MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

文件：400.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D4N04C；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

文件：399.28 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，40V，558A，0.45mΩ，PQFN 8x8

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Very Low RDS(on), Shielded Gate Trench Technology\n• Minimize conduction losses\n• Low Profile PQFN 8x8 package\n• High peak current and low parasitic inductance\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• RoHS Compliant;

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安森美半导体

MOSFET AFSM T6 40V LL NCH

ONSEMI

安森美半导体

MOSFET AFSM T6 40V SG NCH

ONSEMI

安森美半导体