丝印：0D4N04CL；Package：POWER88；MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Powe

文件：401.04 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D4N04CL；Package：POWER88；MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

文件：400.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体