丝印：0D6N04C；Package：DFNW8；MOSFET ??Power, Single N-Channel 40 V, 0.48 m, 533 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Plated for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：382.52 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D6N04C；Package：POWER88；Power MOSFET 40 V, 0.48 m, 533 A, Single N?묬hannel

文件：306.62 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：0D6N04CL；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.42 m, 554.5 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Plated for Enhanced Optical Inspection • AEC−101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre

文件：407.77 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D6N04CL；Package：POWER88；Power MOSFET 40 V, 0.42 m, 554.5 A, Single N?묬hannel

文件：316.39 Kbytes 页数：8 Pages

ONSEMI

安森美半导体