丝印：0D6N04C；Package：POWER88；Power MOSFET 40 V, 0.48 m, 533 A, Single N?묬hannel

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MOSFET T6 40V SG PQFN8x8 EXPANSI

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MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.57 m, 380 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Bat

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MOSFET ??Power, Single N-Channel 40 V, 0.48 m, 533 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Plated for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fr

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MOSFET ??Power, Single N-Channel 40 V, 0.42 m, 554.5 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Plated for Enhanced Optical Inspection • AEC−101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre

文件：407.77 Kbytes 页数：7 Pages

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安森美半导体