NTMFS0D7N04XMT1G

Marking：0D7N4；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.7 m, 323 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •BatteryProtection •ORing

NTMFS0D7N04XL

Marking：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features LowRDS(on)toMinimizeConductionLoss LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications HighSwitc

NTMFS0D7N04XLT1G

Marking：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features LowRDS(on)toMinimizeConductionLoss LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications HighSwitc

NVMFWS0D7N04XMT1G

Marking：0D7N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.70 m, 331 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •B