丝印：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

文件：185.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

文件：185.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET, Single, N-Channel, 40V, 0.7mΩ, 349A, SO8-FL 5x6

The latest 40V power MOSFET technology with best-in-class of Figure-of-Merit. Lower On-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. Smaller peak reverse recovery current with good softness behaivor can perform lower • Latest 40V MOSFET Technology.\n• Lowest On-Resistance in 5x6 Package.\n• Less Peak Reverse Recovery Current with Good Softness Performance.\n• Lower Output Charge by Smaller Ouput Capacitance.;

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.7 m, 323 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：140.94 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

文件：363.33 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

文件：363.33 Kbytes 页数：7 Pages

ONSEMI

安森美半导体