MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

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ONSEMI

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丝印：0D7N04C；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

文件：363.33 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

功率 MOSFET，单 N 沟道，40 V，0.67 mΩ，420 A

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Small Footprint (8x8 mm)\n• Low RDS(on)\n• Low QG and Capacitance\n• RoHS Compliant;

ONSEMI

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MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.70 m, 331 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件：278.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated Option for Enhanced Optical Inspection •

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ONSEMI

安森美半导体

First PowerDI8080-Packaged 40V MOSFET Delivers Industry-Leading Performance

Applications High-power DC-DC converters EV charging systems High-power BLDC motor controls

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DIODES

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