丝印：0D7N06C；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.72 m, 464 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：357.47 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：0D7N06C；Package：DFNW8；MOSFET - Power, Single N-Channel, DFNW8 60 V, 0.72 m, 464 A

文件：402.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N06CL；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Option for Enhanced Optical Inspection • These D

文件：394.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N06CL；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

文件：401.4 Kbytes 页数：7 Pages

ONSEMI

安森美半导体