丝印：0D4N4；Package：DFN5；MOSFET - Power, Single N-Channel, SO8-FL 40 V, 0.42 m, 509 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：217.25 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：0D4N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.42 m, 512 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Bat

文件：225.01 Kbytes 页数：7 Pages

ONSEMI

安森美半导体