丝印：0D6N；Package：DFN5；MOSFET - Power, Single N-Channel, SO8-FL

文件：183.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D6N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.57 m, 380 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Bat

文件：153.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D6N04CL；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.42 m, 554.5 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Plated for Enhanced Optical Inspection • AEC−101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre

文件：407.77 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D6N04C；Package：DFNW8；MOSFET ??Power, Single N-Channel 40 V, 0.48 m, 533 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Plated for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：382.52 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D6N04CL；Package：POWER88；Power MOSFET 40 V, 0.42 m, 554.5 A, Single N?묬hannel

文件：316.39 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：0D6N04C；Package：POWER88；Power MOSFET 40 V, 0.48 m, 533 A, Single N?묬hannel

文件：306.62 Kbytes 页数：8 Pages

ONSEMI

安森美半导体