丝印：0D5N；Package：DFN5；MOSFET - Power, Single N-Channel, SO8-FL

文件：181.11 Kbytes 页数：7 Pages

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丝印：0D5N4L；Package：DFNW5；MOSFET - Power, Single N-Channel, Logic Level, SO-8FL 40 V, 0.49 m, 455 A

Features • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Loss • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • High Switc

文件：137.39 Kbytes 页数：7 Pages

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丝印：0D5N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.52 m, 423 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件：223.1 Kbytes 页数：7 Pages

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丝印：0D5N04M8；Package：MO-299A；MOSFET ??Power, Single, N-Channel 40 V, 300 A, 0.57 m

文件：496.6 Kbytes 页数：7 Pages

ONSEMI

安森美半导体