丝印：0D7N02；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down 33, WDFN33 25 V, 0.70 m, 281 A

Features  Advanced Source−Down Package Technology (3.3 x 3.3 mm) with Excellent Thermal Conduction  Ultra Low RDS(on) to Improve System Efficiency  Low QG and Capacitance to Minimize Driving and Switching Losses  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Ap

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