丝印：0D7N02；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down 33, WDFN33 25 V, 0.70 m, 281 A

Features  Advanced Source−Down Package Technology (3.3 x 3.3 mm) with Excellent Thermal Conduction  Ultra Low RDS(on) to Improve System Efficiency  Low QG and Capacitance to Minimize Driving and Switching Losses  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Ap

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安森美半导体

MOSFET - PowerTrench® T10, Single, N-Channel, Source Down, WDFN9, 25 V, 0.72 mΩ, 276 A

The latest 25V power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. smaller peak reverse recovery current with good softness beha

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安森美半导体

MOSFET - Power, Single N-Channel, Source Down Dual Cool 33, WDFN9 25 V, 0.58 m, 310 A

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3 x 3.3 mm) • Ultra Low RDS(on) to Improve System Efficiency • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and

文件：431.55 Kbytes 页数：8 Pages

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