丝印：0D7；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down Dual Cool 33, WDFN9 25 V, 0.58 m, 310 A

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3 x 3.3 mm) • Ultra Low RDS(on) to Improve System Efficiency • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and

文件：431.55 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, Source Down 33, WDFN33 25 V, 0.70 m, 281 A

Features  Advanced Source−Down Package Technology (3.3 x 3.3 mm) with Excellent Thermal Conduction  Ultra Low RDS(on) to Improve System Efficiency  Low QG and Capacitance to Minimize Driving and Switching Losses  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Ap

文件：483.92 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

ON
原厂原封

ON

上传：深圳科宇泰科技有限公司

ON
SOT-963

ON

上传：深圳市粤骏腾电子科技有限公司