NTTFSSCH0D7N02X

Marking：0D7；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down Dual Cool 33, WDFN9 25 V, 0.58 m, 310 A

Features •ExcellentThermalConductionbyAdvancedSource−DownCenter GateDual−CoolingPackageTechnology(3.3x3.3mm) •UltraLowRDS(on)toImproveSystemEfficiency •LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeand

NTMFS0D7N04XL

Marking：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features LowRDS(on)toMinimizeConductionLoss LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications HighSwitc

NTMFS0D7N04XLT1G

Marking：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features LowRDS(on)toMinimizeConductionLoss LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications HighSwitc

NTMFS0D7N04XMT1G

Marking：0D7N4；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.7 m, 323 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •BatteryProtection •ORing

NTTFSSH0D7N02X

Marking：0D7N02；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down 33, WDFN33 25 V, 0.70 m, 281 A

Features AdvancedSource−DownPackageTechnology(3.3x3.3mm)with ExcellentThermalConduction UltraLowRDS(on)toImproveSystemEfficiency LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Ap

NVMFWS0D7N04XMT1G

Marking：0D7N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.70 m, 331 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •B

NVMTS0D7N04CLTXG

Marking：0D7N04CL；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.63 m, 433 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •Power88Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •WettableFlankPlatedforEnhancedOpticalInspection •TheseD

NVMTS0D7N04CTXG

Marking：0D7N04C；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •Power88Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •WettableFlankPlatedOptionforEnhancedOpticalInspection •

NVMTS0D7N06CLTXG

Marking：0D7N06CL；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •Power88Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •WettableFlankOptionforEnhancedOpticalInspection •TheseD

NVMTS0D7N06CTXG

Marking：0D7N06C；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.72 m, 464 A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •WettableFlankPlatedforEnhancedOpticalInspection •TheseDevicesarePb−Free,HalogenFree/BFRFr