丝印：0D7N04CL；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.63 m, 433 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These D

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MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated Option for Enhanced Optical Inspection •

文件：359.68 Kbytes 页数：7 Pages

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安森美半导体

MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

文件：185.43 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.7 m, 323 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：140.94 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

文件：363.33 Kbytes 页数：7 Pages

ONSEMI

安森美半导体