丝印：0D7；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down Dual Cool 33, WDFN9 25 V, 0.58 m, 310 A

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3 x 3.3 mm) • Ultra Low RDS(on) to Improve System Efficiency • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and

文件：431.55 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

文件：185.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

文件：185.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：0D7N4；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.7 m, 323 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：140.94 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N02；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down 33, WDFN33 25 V, 0.70 m, 281 A

Features  Advanced Source−Down Package Technology (3.3 x 3.3 mm) with Excellent Thermal Conduction  Ultra Low RDS(on) to Improve System Efficiency  Low QG and Capacitance to Minimize Driving and Switching Losses  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Ap

文件：483.92 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：0D7N4W；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.70 m, 331 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件：278.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N04CL；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.63 m, 433 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These D

文件：363.96 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N04C；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated Option for Enhanced Optical Inspection •

文件：359.68 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N06CL；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Option for Enhanced Optical Inspection • These D

文件：394.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N06C；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.72 m, 464 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：357.47 Kbytes 页数：8 Pages

ONSEMI

安森美半导体