MOSFET ??Power, Single N-Channel, DFNW8 150 V, 6.4 m, 128 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：297.83 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Single N-Channel Power MOSFET 150V, 128A, 6.4mΩ

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. \nWettable Flank capable for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (8x8 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• Wettable Flank Option\n• Enhanced Optical Inspection\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive qualified\n• RoHS Compliant;

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel, DFNW8 150 V, 6.4 m, 135 A

文件：334.09 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

QFP208

NEXTCHIP

上传：深圳市柯尔基电子有限公司

QFP128

NEXTCHIP

上传：深圳广友电子有限公司