NTMTS6D0N15MC

Single N-Channel Power MOSFET 150V, 135A, 6.4mΩ, PQFN 8x8; • Very Low RDS(on), Shielded Gate Trench Technology\n• Minimize conduction losses\n• Low Profile PQFN 8x8 package\n• High peak current and low parasitic inductance\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• Soft Body diode with low Qrr\n• Reduces switching spike\n• RoHS Compliant\n;

This N-Channel PTNG 150V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.

NTMTS6D0N15MC

丝印：6D0N15MC；Package：DFNW8；MOSFET ??Power, Single N-Channel, DFNW8 150 V, 6.4 m, 135 A

NVMTS6D0N15MC

MOSFET??Power,SingleN-Channel,DFNW8150V,6.4m,128A

Features •SmallFootprint(8x8mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant