Single N-Channel Power MOSFET 150V, 135A, 6.4mΩ, PQFN 8x8

This N-Channel PTNG 150V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance. • Very Low RDS(on), Shielded Gate Trench Technology\n• Minimize conduction losses\n• Low Profile PQFN 8x8 package\n• High peak current and low parasitic inductance\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• Soft Body diode with lo;

ONSEMI

安森美半导体

丝印：6D0N15MC；Package：DFNW8；MOSFET ??Power, Single N-Channel, DFNW8 150 V, 6.4 m, 135 A

文件：334.09 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel, DFNW8 150 V, 6.4 m, 128 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：297.83 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

ON
SOT883

ON

上传：深圳市兴灿科技有限公司

NF/耐福
QFN40

NF/耐福

上传：深圳市勤思达科技有限公司