MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Co

文件：386.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Powe

文件：401.04 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D4N04CL；Package：POWER88；MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Powe

文件：401.04 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D4N04C；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Co

文件：386.41 Kbytes 页数：7 Pages

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安森美半导体

单 N 沟道功率 MOSFET 40V，558A，0.45mΩ

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (8x8 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• Wettable Flank Option\n• Enhanced Optical Inspection\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive qualified\n• RoHS Compliant;

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，40V，553.8A，0.4mΩ

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (8x8 mm)\n• Low RDS(on)\n• Low QG and Capacitance\n• Wettable Flank Option\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant;

ONSEMI

安森美半导体