FDMS4D5N08LC

Power MOSFET 80V Single N Channel, 116A, 4.2mΩ in Power 56 Package.; • Shielded Gate MOSFET Technology\n• Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 37 A\n• Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 29 A\n• 50% Lower Qrr than Other MOSFET Suppliers\n• Lowers Switching Noise/EMI\n• MSL1 Robust Package Design\n• 100% UIL Tested\n• RoHS Compliant\n• Logic Level drive Capable\n;

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

FDMS4D5N08LC

丝印：FDMS4D5N08LC；Package：PQFN8；MOSFET, N-Channel Shielded Gate, POWERTRENCH

NVMFWS4D5N08X

MOSFET-Power,SingleN-Channel,STDGate,SO8FL80V,4.5m,92A

Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •SynchronousRectificat