MOSFET ??Power, Single N-Channel 60 V, 1.36 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：364.23 Kbytes 页数：7 Pages

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安森美半导体

丝印：1D6N06CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 60 V, 1.36 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：364.23 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

功率 MOSFET，60 V，1.36 mΩ，250 A，单 N 沟道

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−sided Cooled Packaging • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Applications • Synchronous Rectifier • DC−DC Conversion • Oring FET and Load Switching

文件：409.25 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 60 V, 1.5 m, 235 A

文件：369.12 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−sided Cooled Packaging • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Applications • Synchronous Rectifier • DC−DC Conversion • Oring FET and Load Switching

文件：409.25 Kbytes 页数：7 Pages

ONSEMI

安森美半导体