Power MOSFET, 60V N Channel 235A 1.5m Ohm in Dualcool56 package

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal re • Top and bottom sided exposed in standard 5x6mm pin-out\n• Improved thermal dissipation through top and bottom side of the package\n• Ultra low RDS-on\n• Reduced conduction loss\n• Reduced capacitances and package inductance\n• Reduced switching loss;

ONSEMI

安森美半导体

丝印：612LDC；Package：DFN8；MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 60 V, 1.5 m, 235 A

文件：369.12 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−sided Cooled Packaging • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Applications • Synchronous Rectifier • DC−DC Conversion • Oring FET and Load Switching

文件：409.25 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, DUAL COOL N-Channel DFN8 5x6 60 V, 1.5 m, 224 A

Features • Advanced Dual−sided Cooled Packaging • Ulra Low RDS(on) • MSL1 Robust Packaging Design • AEC−Q101 Qualified Typical Applications • Orring FET/Load Switching • Synchronous Rectifier • DC−DC Conversion

文件：369.86 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 1.36 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：364.23 Kbytes 页数：7 Pages

ONSEMI

安森美半导体