丝印：612VDC；Package：DFN8；MOSFET - Power, DUAL COOL N-Channel DFN8 5x6 60 V, 1.5 m, 224 A

Features • Advanced Dual−sided Cooled Packaging • Ulra Low RDS(on) • MSL1 Robust Packaging Design • AEC−Q101 Qualified Typical Applications • Orring FET/Load Switching • Synchronous Rectifier • DC−DC Conversion

文件：369.86 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET, DUAL COOL® N-Channel 60 V, 1.5 mΩ, 224 A

Automotive Power MOSFET in a 5x6mm flat lead, dual cool package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive qualified;

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安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 1.36 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：364.23 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 1.36 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：364.23 Kbytes 页数：7 Pages

ONSEMI

安森美半导体