丝印：0D9N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.81 m, 342 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：372.1 Kbytes 页数：7 Pages

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安森美半导体

MOSFET – Power, Single N-Channel 40 V, 1.07 m, 531 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 Top Cool Package (TCPAK10) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：312.61 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel 40 V, 1.07 m, 531 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 Top Cool Package (TCPAK10) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：312.61 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.9 m, 278 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

文件：183.14 Kbytes 页数：8 Pages

ONSEMI

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MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.87 m, 310 A

文件：347.61 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, DUAL COOL, DFN8 5x6 40 V, 0.85 m, 313 A

文件：387.61 Kbytes 页数：7 Pages

ONSEMI

安森美半导体