MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC Qualified and PPAP Capable • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications • Synchronous Rectification (

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丝印：1D5N08；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC Qualified and PPAP Capable • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications • Synchronous Rectification (

文件：164.26 Kbytes 页数：7 Pages

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安森美半导体

Single N-Channel Power MOSFET 80V, 253 A, 1.5 mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

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安森美半导体

MOSFET - Power, Single N-Channel 80 V, 1.4 m, 273 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：406.91 Kbytes 页数：7 Pages

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安森美半导体