MOSFET ??Power, Single N-Channel 40 V, 1.7 m, 185 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：363.26 Kbytes 页数：7 Pages

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安森美半导体

丝印：1D7N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.7 m, 185 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：363.26 Kbytes 页数：7 Pages

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安森美半导体

功率 MOSFET，40 V，1.7Ω，185 A，单 N 沟道

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

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安森美半导体

MOSFET - Power, Single N-Channel 40 V, 1.7 m, 190 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • LFPAK4 Package, Industry Standard • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：260.16 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 40 V, 1.7 m, 190 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • LFPAK4 Package, Industry Standard • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：260.16 Kbytes 页数：7 Pages

ONSEMI

安森美半导体