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NVMJS0D9N04C

MOSFET ??Power, Single N-Channel 40 V, 0.81 m, 342 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件:372.1 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMJS0D9N04CL

MOSFET ??Power, Single N-Channel 40 V, 0.82 m, 330 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件:362.94 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMJS0D9N04CLTWG

丝印:0D9N04CL;Package:LFPAK8;MOSFET ??Power, Single N-Channel 40 V, 0.82 m, 330 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件:362.94 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMJS0D9N04CTWG

丝印:0D9N04C;Package:LFPAK8;MOSFET ??Power, Single N-Channel 40 V, 0.81 m, 342 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件:372.1 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMJS0D9N04C

Power MOSFET 40 V, 0.81mΩ, 322 A, Single N-Channel

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

ONSEMI

安森美半导体

NVMJS0D9N04CL

功率 MOSFET,40 V,0.82Ω,330 A,单 N 沟道

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    40

  • VGS Max (V):

    20

  • VGS(th) Max (V):

    4

  • ID Max (A):

    342

  • PD Max (W):

    180

  • RDS(on) Max @ VGS = 10 V(mΩ):

    0.81

  • Qg Typ @ VGS = 10 V (nC):

    117

  • Ciss Typ (pF):

    7400

  • Package Type:

    LFPAK-8

供应商型号品牌批号封装库存备注价格
ON
2022+
LFPAK-8
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ON Semiconductor
21+
8-LFPAK
3000
进口原装!长期供应!绝对优势价格(诚信经营)!!
询价
ON
24+
NA
3000
进口原装 假一罚十 现货
询价
onsemi(安森美)
24+
SOT1205
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
ONN
2324+
3000
原装正品,超低价出售
询价
onsemi/安森美
两年内
NA
4105
实单价格可谈
询价
onsemi
21+
100
只做原装,优势渠道 ,欢迎实单联系
询价
onsemi
23+
2900
加QQ:78517935原装正品有单必成
询价
ON SEMICONDUCTOR
24+
con
35960
查现货到京北通宇商城
询价
24+
N/A
76000
一级代理-主营优势-实惠价格-不悔选择
询价
更多NVMJS0D9N04C供应商 更新时间2025-11-26 8:24:00