NVMJS0D9N04CLTWG

Marking：0D9N04CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.82 m, 330 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp

NTMFS0D9N04XL

MOSFET-Power,SingleN-Channel,LogicLevel,SO8FL40V,0.9m,278A

Features LowRDS(on)toMinimizeConductionLoss LowQRRwithSoftRecoverytoMinimizeERRLossandVoltage Spike LowQGandCapacitancetoMinimizeDrivingandSwitchingLoss TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications HighSwitc

NTMFSC0D9N04C

MOSFET-Power,DUALCOOLN-Channel,DFN85x640V,0.87m,310A

NTMFSC0D9N04CL

MOSFET-Power,SingleN-Channel,DUALCOOL,DFN85x640V,0.85m,313A

NTMJS0D9N04C

MOSFET??Power,SingleN-Channel40V,0.81m,342A

NTMJS0D9N04CL

MOSFET??Power,Single,N-Channel40V,0.82m,330A

NTMJS0D9N04CLTWG

MOSFET??Power,Single,N-Channel40V,0.82m,330A

NTMJS0D9N04CTWG

MOSFET??Power,SingleN-Channel40V,0.81m,342A

NVMFSC0D9N04C

MOSFET-Power,DUALCOOLN-Channel,DFN85x640V,0.87m,310A

Features •AdvancedDual−sidedCooledPackaging •SmallFootprint(5x6mm)forCompactDesign •UlraLowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant •MSL1R

NVMFSC0D9N04CL

MOSFET-Power,DUALCOOLN-Channel,DFN85x640V,0.85m,316A

Features •AdvancedDual−sidedCooledPackaging •SmallFootprint(5x6mm)forCompactDesign •UlraLowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant •MSL1R