丝印：0D9N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.81 m, 342 A

文件：372.14 Kbytes 页数：7 Pages

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MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.87 m, 310 A

Features • Advanced Dual−sided Cooled Packaging • Small Footprint (5x6 mm) for Compact Design • Ulra Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant • MSL1 R

文件：386.85 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.85 m, 316 A

Features • Advanced Dual−sided Cooled Packaging • Small Footprint (5x6 mm) for Compact Design • Ulra Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant • MSL1 R

文件：498.78 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 0.9 m, 273 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

文件：301.54 Kbytes 页数：7 Pages

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安森美半导体