MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 0.9 m, 273 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

文件：301.54 Kbytes 页数：7 Pages

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安森美半导体

丝印：0D9N4W；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 0.9 m, 273 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

文件：301.54 Kbytes 页数：7 Pages

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安森美半导体

Single N-Channel Power MOSFET 40 V, 273 A, 0.90 mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm)\n• Low RDS(on)\n• Low QG and Capacitance\n• Wettable Flank Option\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant;

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安森美半导体

MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.85 m, 316 A

Features • Advanced Dual−sided Cooled Packaging • Small Footprint (5x6 mm) for Compact Design • Ulra Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant • MSL1 R

文件：498.78 Kbytes 页数：8 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.81 m, 342 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：372.1 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.82 m, 330 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：362.94 Kbytes 页数：7 Pages

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安森美半导体