MOSFET - Power, Single N-Channel 60 V, 1.68 m, 224 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：258.779 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：1D7N06C；Package：LFPAK8；MOSFET - Power, Single N-Channel 60 V, 1.68 m, 224 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：258.779 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 60 V, 1.68 mOhms, 224 A, Single N-Channel

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability. • Small Footprint (5x6mm)\n• Compact Design\n• Low RDS (ON)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• LFPAK8 Package\n• Industry Standard\n• AEC-Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free and are RoHS Compliant;

ONSEMI

安森美半导体

NEXTCHIP
QFP208

NEXTCHIP

上传：深圳市柯尔基电子有限公司

NEXTCHIP
QFP128

NEXTCHIP

上传：深圳广友电子有限公司