MOSFET ??Power, Single N-Channel 60 V, 0.81 m, 398.2 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These D

文件：401.46 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：001N06CL；Package：DFNW8；MOSFET ??Power, Single N-Channel 60 V, 0.81 m, 398.2 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These D

文件：401.46 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：T6 60V LL PQFN8*8 EXPANSI

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 0.91 m, 376 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：400.42 Kbytes 页数：7 Pages

ONSEMI

安森美半导体