丝印：001N06CL；Package：DFNW8；MOSFET ??Power, Single N-Channel 60 V, 0.81 m, 398.2 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These D

文件：401.46 Kbytes 页数：7 Pages

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安森美半导体

丝印：001N06CL；Package：POWER88；Power MOSFET 60 V, 0.81 m, 398.2 A, Single N?묬hannel

文件：364.03 Kbytes 页数：7 Pages

ONSEMI

安森美半导体