MOSFET ??Power, Single N-Channel 40 V, 0.92 m, 300 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：361.98 Kbytes 页数：7 Pages

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安森美半导体

丝印：1D0N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.92 m, 300 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：361.98 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

功率 MOSFET，40 V，0.92Ω，300 A，单 N 沟道

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, Logic Level 40 V, 1.0 m, 291 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • New Power 88 Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：247.07 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, Logic Level 40 V, 1.0 m, 291 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • New Power 88 Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：247.07 Kbytes 页数：7 Pages

ONSEMI

安森美半导体