NVMJS1D0N04C

MOSFET ??Power, Single N-Channel 40 V, 0.92 m, 300 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMJS1D0N04C

功率 MOSFET，40 V，0.92Ω，300 A，单 N 沟道;

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

NVMJS1D0N04CTWG

Marking：1D0N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.92 m, 300 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NTMFSC1D0N04HL

MOSFET-Power,SingleN-Channel,DUALCOOL,DFN85x6.1540V,1.0m,288A

NTMJS1D0N04C

MOSFET??Power,Single,N-Channel40V,0.92m,300A

NTMJS1D0N04CTWG

MOSFET??Power,Single,N-Channel40V,0.92m,300A

NVMTS1D0N04CL

MOSFET-Power,SingleN-Channel,LogicLevel40V,1.0m,291A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •NewPower88Package •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVMTS1D0N04CLTXG

MOSFET-Power,SingleN-Channel,LogicLevel40V,1.0m,291A

Features •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •NewPower88Package •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant