MOSFET - Power, Single N-Channel, Logic Level 40 V, 1.0 m, 291 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • New Power 88 Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：247.07 Kbytes 页数：7 Pages

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丝印：1D0N04CL；Package：TDFNW8；MOSFET - Power, Single N-Channel, Logic Level 40 V, 1.0 m, 291 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • New Power 88 Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：247.07 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET, Single, N-Channel Logic Level, 40 V, 1.0 mO, 291 A

Power MOSFET, Single, N-Channel Logic Level, 40 V, 1.0 mO, 291 A • Small Footprint (8x8 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive qualified\n• These Devices are Pb-Free and are RoHS Compliant\n• New Power 88 Package;

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MOSFET - Power, Single N-Channel, DUAL COOL, DFN8 5x6.15 40 V, 1.0 m, 288 A

文件：376.33 Kbytes 页数：7 Pages

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MOSFET ??Power, Single, N-Channel 40 V, 0.92 m, 300 A

文件：361.35 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Single, N-Channel 40 V, 0.92 m, 300 A

文件：361.35 Kbytes 页数：7 Pages

ONSEMI

安森美半导体