MOSFET – Power, Single N-Channel 40 V, 3.3 m, 157 A

Features  Small Footprint (5x7 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  TCPAK57 5x7 Top Cool Package  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free and are RoHS Compliant

文件：195.08 Kbytes 页数：7 Pages

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丝印：3D34C；Package：TCPAK57；MOSFET – Power, Single N-Channel 40 V, 3.3 m, 157 A

Features  Small Footprint (5x7 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  TCPAK57 5x7 Top Cool Package  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free and are RoHS Compliant

文件：195.08 Kbytes 页数：7 Pages

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安森美半导体

Single N-Channel Power MOSFET 40V, 102A, 3.3 mΩ on Top Cool Package

Automotive Power MOSFET in a TCPAK5x7 package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability. • Top Side Cooling\n• Small Footprint (5x7 mm)\n• Low RDS(on)\n• Low QG and Capacitance\n• Gull-wings leads for an improved BLR performance\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant;

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QFP208

NEXTCHIP

上传：深圳市柯尔基电子有限公司

QFP128

NEXTCHIP

上传：深圳广友电子有限公司