MOSFET - Power, Dual N-Channel 60 V, 26.5 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.59 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Dual N-Channel 60 V, 27 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Dual N-Channel 60 V, 27 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：027N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 26.5 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.59 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：027N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 27 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual N−Channel Power MOSFET 60V, 21A, 26.5mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm)\n• Compact Design\n• Low rDS(on)\n• Minimize Conduction Loss\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant;

ONSEMI

安森美半导体